IGBT
Description
BSM150GB170DN2 E3166
IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate RG on,min = 10 Ohm Type BSM150GB170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package HALF-BRIDGE 2
O...
Similar Datasheet
- BSM150GB170DN2E3166 IGBT - Siemens Semiconductor Group