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BSM150GAL120DN2E3166

Part Number	BSM150GAL120DN2E3166
Manufacturer	Siemens Semiconductor Group
Description	IGBT
Published	Mar 23, 2005
Detailed Description	BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Pack...
Datasheet	BSM150GAL120DN2E3166 PDF File

Overview

BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM150GAL120DN2E3166 1200V 210A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage HALF BRIDGE GAL 2 C67076-A2112-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 210 150 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 420 300 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1250 W + 150 -55 .
.
.
+ 150 ≤ 0.
1 ≤ 0.
25 ≤ 0.
125 4000 20 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Ch...

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BSM150GAL120DN2E3166 IGBT - Siemens Semiconductor Group

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