Document
BSM 150 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate
Type BSM 150 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package
Ordering Code
1200V 210A
HALF BRIDGE GAL 2 C67076-A2013-A70
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 210 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1250
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.25 ≤ 0.18 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD RTHJCDC Vis
-
Semiconductor Group
1
Mar-29-1996
BSM 150 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 2 8 6.5 3 3.7
V
VGE = VCE, IC = 6 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 150 A, Tj = 25 °C VGE = 15 V, IC = 150 A, Tj = 125 °C
Zero gate voltage collector current
ICES
2.8 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
62 11 1.6 0.6 -
S nF -
VCE = 20 V, IC = 150 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Mar-29-1996
BSM 150 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit
td(on)
200 400
ns
VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Ω
Rise time
tr
100 200
VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Ω
Turn-off delay time
td(off)
600 800
VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Ω
Fall time
tf
70 100
VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Ω
Free-Wheel Diode Diode forward voltage
VF
2.3 1.8 2.8 -
V
IF = 150 A, VGE = 0 V, Tj = 25 °C IF = 150 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
trr
0.4 -
µs
IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C
Reverse recovery charge
Qrr
µC
IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C Tj = 125 °C
5 18 -
Semiconductor Group
3
Mar-29-1996
BSM 150 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Chopper Diode Chopper diode forward voltage
VFC
2.3 1.8 2.8 -
V
IFC = 200 A, VGE = 0 V, Tj = 25 °C IFC = 200 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time, chopper
trrC
0.5 -
µs
IFC = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C
Reverse recovery charge, chopper
QrrC
µC
IFC = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/µs Tj = 25 °C Tj = 125 °C
12 36 -
Semiconductor Group
4
Mar-29-1996
BSM 150 GAL 120 DN2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 420g
.