N-Channel Reduced N-Channel Reduced
Si7386DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.007 a...
Description
Si7386DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.007 at VGS = 10 V 0.0095 at VGS = 4.5 V
ID (A) 19 17
Qg (Typ.) 11.5
PowerPAK SO-8
6.15 mm
D 8D
7 D
6 D
5
S 1S
5.15 mm
2 S
3 G
4
Bottom View
Ordering Information: Si7386DP-T1-E3 (Lead (Pb)-free) Si7386DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free available TrenchFET® Gen II Power MOSFET PWM Optimized for High Efficiency New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile 100 % Rg Tested
APPLICATIONS DC/DC Conversion for PC
D
RoHS
COMPLIANT
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
19 16
12 9
Pulsed Drain Current
IDM ± 50
Continuous Source Current (Diode Conduction)a
IS 4.1 1.5
Av...
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