Si7386DP

Si7386DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.007 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A) 19 17 Qg (Typ.) 11.5 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7386DP-T1-E3 (Lead (Pb)-free) Si7386DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free available TrenchFET® Gen II Power MOSFET PWM Optimized for High Efficiency New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS DC/DC Conversion for PC D RoHS COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 19 16 12 9 Pulsed Drain Current IDM ± 50 Continuous Source Current (Diode Conduction)a IS 4.1 1.5 Av...