BSM100GB120DN2K

BSM 100 GB 120 DN2K IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type BSM 100 GB 120 DN2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2107-A70 1200V 145A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 145 100 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 700 W + 150 -55 ... + 150 ≤ 0.18 ≤ 0.36 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Mar-29-1996 BSM 100 GB 120 DN2K Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 1.5 6 6.5 3 3.7 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C Zero gate voltage collector current ICES 2 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 400 nA VGE ...