Preliminary data
BSL211SP
OptiMOS-P Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Super Logic Leve...
Preliminary data
BSL211SP
OptiMOS-P Small-Signal-
Transistor
Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated
Product Summary VDS RDS(on) ID -20 67 -4.7
P-TSOP6-6
V mΩ A
4 5 6
3 2 1
Type BSL211SP
Package P-TSOP6-6
Ordering Code Q67042-S4063
Marking sPB
Gate pin 3
Drain pin 1,2, 5,6 Source pin 4
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -4.7 -3.8
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
-18.8 26 -6 ±12 2 -55... +150 55/150/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =-4.7 A , VDD =-10V, RGS =25Ω
Reverse diode dv/dt
IS =-4.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-12-06
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
BSL211SP
Symbol min. RthJS RthJA -
Values typ. max. 50 230 62.5
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6
Values typ. -0.9 max. -1.2
Unit
V
Gate threshold voltage, VGS = VDS
ID =-...