BSH299

DISCRETE SEMICONDUCTORS DATA SHEET BSH299 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor FEATURES Low threshold voltage High-speed switching No secondary breakdown Direct interface to C-MOS, TTL, etc. APPLICATIONS Power management Battery powered applications e.g. cellular phones General purpose switch. handbook, halfpage BSH299 PINNING - SOT363 PIN 1 2 3 4 5 6 SYMBOL d d g s d d DESCRIPTION drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. 1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation open drain Top view Fig.1 Simplified outline and symbol. CONDITIONS − − ID = −1 mA; VDS = VGS Ts = 80 °C ID = −0.13 A; VGS = −10 V Ts = 80 °C MIN. MAX. −50 ±20 −2 −0.2 10 0.7 V V V A Ω W UNIT −0.8 − − − 1998 Feb 18 2 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SY...