BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323.
2. Features
s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature su...