BSH114

BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 M3D088 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH114 in SOT23. 2. Features s s s s TrenchMOS™ technology Low on-state resistance Very fast switching Surface mount package. 3. Applications s Relay driver s DC to DC converter s General purpose switch. c c 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MSB003 MBB076 d s SOT23 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSH114 N-channel enhancement mode field effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 0.5 A Typ − − − − 400 Max 100 0.85 0.83 150 500 Unit V A W °C mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 and 3 Tamb = 25...