BSH112
N-channel enhancement mode field-effect transistor
Rev. 01 — 25 August 2000
M3D088
Product specification
1. Descr...
BSH112
N-channel enhancement mode field-effect
transistor
Rev. 01 — 25 August 2000
M3D088
Product specification
1. Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23.
2. Features
s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes.
3. Applications
c c
s Relay driver s High speed line driver s Logic level translator.
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
Simplified outline
Symbol
source (s) drain (d)
g
d
03ab44 03ab60
1
2
s
SOT23
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BSH112
N-channel enhancement mode field-effect
transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 500 mA VGS = 4.5 V; ID = 75 mA Typ − − − − 2.8 3.8 Max 60 300 0.83 150 5 5.3 Unit V mA W °C Ω Ω drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (D...