BSH112

BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 M3D088 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH112 in SOT23. 2. Features s s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package Gate-source ESD protection diodes. 3. Applications c c s Relay driver s High speed line driver s Logic level translator. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g d 03ab44 03ab60 1 2 s SOT23 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSH112 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 10 V Tsp = 25 °C VGS = 10 V; ID = 500 mA VGS = 4.5 V; ID = 75 mA Typ − − − − 2.8 3.8 Max 60 300 0.83 150 5 5.3 Unit V mA W °C Ω Ω drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (D...