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K9F5608Q0C Dataheets PDF



Part Number K9F5608Q0C
Manufacturers Samsung
Logo Samsung
Description NAND Flash Memory
Datasheet K9F5608Q0C DatasheetK9F5608Q0C Datasheet (PDF)

K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Apr. 25th 2002 Remark Advance 1.0 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C Dec.14th 2002 Preliminary 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (.

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Document
K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Apr. 25th 2002 Remark Advance 1.0 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C Dec.14th 2002 Preliminary 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock scheme.(Page 32~35) 5. Pin assignment of TBGA A3 ball is changed. (before) N.C --> (after) Vss 6. Pin assignment of WSOP #38 pin is changed. (before) LOCKPRE --> (after) N.C 2.0 1. The Maximum operating current is changed. Program : Icc2 20mA-->25mA Erase : Icc3 20mA-->25mA Jan. 17th 2003 Preliminary 2.1 The min. Vcc value 1.8V devices is changed. K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V Mar. 5th 2003 Preliminary 2.2 Pb-free Package i.


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