CMOS SRAM
K6R1004C1D
PRELIMINARY PRELPIrMeliImNAinRarYy
CMOS SRAM
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM...
Description
K6R1004C1D
PRELIMINARY PRELPIrMeliImNAinRarYy
CMOS SRAM
Document Title
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
Revision History
Rev.No.
History
Rev. 0.0 Rev. 0.1 Rev. 0.2
Initial release with Preliminary.
Current modify
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns 12ns
Previous 85mA 75mA
Current 75mA 65mA
Draft Data
Remark
June. 8. 2001 September. 9. 2001 December. 18. 2001
Preliminary Preliminary Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 0.2 December 2001
K6R1004C1D
PRELIMINARY PRELPIrMeliImNAinRarYy
CMOS SRAM
1Mb Async. Fast SRAM Ordering ...
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