K6R1004C1D

K6R1004C1D PRELIMINARY PRELPIrMeliImNAinRarYy CMOS SRAM Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev.No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item ICC(Industrial) 10ns 12ns Previous 85mA 75mA Current 75mA 65mA Draft Data Remark June. 8. 2001 September. 9. 2001 December. 18. 2001 Preliminary Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 0.2 December 2001 K6R1004C1D PRELIMINARY PRELPIrMeliImNAinRarYy CMOS SRAM 1Mb Async. Fast SRAM Ordering ...