CMOS SRAM
K6R1004V1D
PRELIMINARY PRELIfMorINAAT&RTY
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operatin...
Description
K6R1004V1D
PRELIMINARY PRELIfMorINAAT&RTY
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No.
History
Rev. 0.0 Rev. 0.1 Rev. 0.2
Initial document. Speed bin modify Current modify
Rev. 1.0
1. Delete 12ns speed bin.
2. Change Icc for Industrial mode.
Item
Previous
ICC(Industrial)
8ns 10ns
100mA 85mA
Current 90mA 75mA
Draft Data
Remark
May. 11. 2001 June. 18. 2001 September. 9. 2001
Preliminary Preliminary Preliminary
December. 18. 2001 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 1.0 December 2001
K6R1004V1D
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