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K6R1004V1D

Samsung semiconductor
Part Number K6R1004V1D
Manufacturer Samsung semiconductor
Description CMOS SRAM
Published Dec 8, 2017
Detailed Description K6R1004V1D PRELIMINARY PRELIfMorINAAT&RTY CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operatin...
Datasheet PDF File K6R1004V1D PDF File

K6R1004V1D
K6R1004V1D

Overview
K6R1004V1D PRELIMINARY PRELIfMorINAAT&RTY CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.
3V Operating) Operated at Commercial and Industrial Temperature Ranges.
Revision History Rev.
No.
History Rev.
0.
0 Rev.
0.
1 Rev.
0.
2 Initial document.
Speed bin modify Current modify Rev.
1.
0 1.
Delete 12ns speed bin.
2.
Change Icc for Industrial mode.
Item Previous ICC(Industrial) 8ns 10ns 100mA 85mA Current 90mA 75mA Draft Data Remark May.
11.
2001 June.
18.
2001 September.
9.
2001 Preliminary Preliminary Preliminary December.
18.
2001 Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right t...


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