K6T4008U1C

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820 0.11 Errata correct - 32-TSOP1-0813 products: T → TG 1.0 Finalize Draft Data January 13, 1998 June 12, 1998 Remark Advance Preliminary November 7, 1998 January 15, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 January 1999 K6T4008V1C, K6T4008U1C Family CMOS SRAM 512K×8 bit Low Power and Low ...