K6T4008C1B

K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA 1.0 Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF 2.0 Revise - Change datasheet format 3.0 Revise - Industrial product speed bin change:70/100ns → 55/70ns CMOS SRAM Draft Date December 7, 1996 Remark Advance March 6, 1997 Preliminary October 9, 1997 Final February 17, 1998 Final September 8, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 3.0 September 1998 K6T4008C1B Family CMOS SRAM...