OSG65R900

 General Description OSG65R900A,OSG65R900D,OSG65R900F Enhancement Mode N-Channel Power MOSFET OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS@Tjmax  ID  RDS(ON),max@VGS=10V 700V 5A 0.9Ω  TO-251,TO-252,TO-220F Package Information Schematic Diagram Pin Assignment-Top View TO-251 OSG65R900A TO-252 OSG65R900D TO-220F OSG65R900F  Absolute Maximum Ratings（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(Note 1) Drain Current- Pulsed(Note 2) Power Dissipation(Note 3) for TO-251,TO-252 Power Dissipation(Note 3) for TO-220F Single Pulsed-Avalanche Energy(Note 6) Operation and Storage Junction Temperature Symbol VDS VGS ID IDM PD EAS TSTG，TJ Value 650 ±30 5 15 37 26 136 -55 to 150 Unit V ...