Enhancement Mode N-Channel Power MOSFET
General Description
OSG65R900A,OSG65R900D,OSG65R900F
Enhancement Mode N-Channel Power MOSFET
OSG65R900x series use a...
Description
General Description
OSG65R900A,OSG65R900D,OSG65R900F
Enhancement Mode N-Channel Power MOSFET
OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.
VDS@Tjmax ID RDS(ON),max@VGS=10V
700V 5A
0.9Ω
TO-251,TO-252,TO-220F Package Information
Schematic Diagram
Pin Assignment-Top View
TO-251 OSG65R900A
TO-252 OSG65R900D
TO-220F OSG65R900F
Absolute Maximum Ratings(TA=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(Note 1) Drain Current- Pulsed(Note 2) Power Dissipation(Note 3) for TO-251,TO-252 Power Dissipation(Note 3) for TO-220F Single Pulsed-Avalanche Energy(Note 6) Operation and Storage Junction Temperature
Symbol VDS VGS ID IDM
PD
EAS TSTG,TJ
Value 650 ±30 5 15 37 26 136
-55 to 150
Unit V ...
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