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GA100SICP12-227

GeneSiC

Silicon Carbide Junction Transistor/Schottky Diode Co-pack


Description
GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Optional Gate Return Pin Exceptional Safe Operating Area Integrated SiC Schottky Rectifier Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive...



GeneSiC

GA100SICP12-227

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