DatasheetsPDF.com

H5N2509P

Hitachi
Part Number H5N2509P
Manufacturer Hitachi
Description Silicon N-Channel MOSFET
Published Dec 4, 2017
Detailed Description H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 20...
Datasheet PDF File H5N2509P PDF File

H5N2509P
H5N2509P

Overview
H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st.
Edition Mar.
2001 Features • Low on-resistance : RDS(on) = 0.
053 Ω typ.
• Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.
3 Ω, VGS = 10 V) • Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) • Avalanche ratings Outline TO–3P D G S 1 2 3 1.
Gate 2.
Drain (Flange) 3.
Source H5N2509P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)