Silicon N-Channel MOSFET
H5N2509P
Silicon N Channel MOSFET High Speed Power Switching
ADE-208-1378 (Z) Target Specification 1st. Edition
Mar. 20...
Description
H5N2509P
Silicon N Channel MOSFET High Speed Power Switching
ADE-208-1378 (Z) Target Specification 1st. Edition
Mar. 2001
Features
Low on-resistance : RDS(on) = 0.053 Ω typ.
Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)
High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V)
Low gate charge
: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A)
Avalanche ratings
Outline
TO–3P
D
G S
1 2 3
1. Gate 2. Drain (Flange) 3. Source
H5N2509P
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current
VDSS VGSS ID I Note1
D (pulse)
I DR
Body-drain diode reverse drain peak current
I Note1 DR (pulse)
Avalanche current Channel dissipation
I Note3 AP
Pch Note2
Channel to case thermal impedance θ ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs and duty cycle ≤ 1...
Similar Datasheet