H5N2509P

H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features Low on-resistance : RDS(on) = 0.053 Ω typ. Low leakage current : IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) High speed switching : tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) Low gate charge : Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) Avalanche ratings Outline TO–3P D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2509P Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 D (pulse) I DR Body-drain diode reverse drain peak current I Note1 DR (pulse) Avalanche current Channel dissipation I Note3 AP Pch Note2 Channel to case thermal impedance θ ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs and duty cycle ≤ 1...