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MT40A2G4 Dataheets PDF



Part Number MT40A2G4
Manufacturers Micron
Logo Micron
Description DDR4 SDRAM
Datasheet MT40A2G4 DatasheetMT40A2G4 Datasheet (PDF)

8Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of 4 banks each • 8 internal banks (x16): 2 groups of 4 banks each • 8n-bit prefetch architecture • Programmable data strobe preamble.

  MT40A2G4   MT40A2G4


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8Gb: x4, x8, x16 DDR4 SDRAM Features DDR4 SDRAM MT40A2G4 MT40A1G8 MT40A512M16 Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C • 16 internal banks (x4, x8): 4 groups of 4 banks each • 8 internal banks (x16): 2 groups of 4 banks each • 8n-bit prefetch architecture • Programmable data strobe preambles • Data strobe preamble training • Command/Address latency (CAL) • Multipurpose register READ and WRITE capability • Write and read leveling • Self refresh mode • Low-power auto self refresh (LPASR) • Temperature controlled refresh (TCR) • Fine granularity refresh • Self refresh abort • Maximum power saving • Output driver calibration • Nominal, park, and dynamic on-die termination (ODT) • Data bus inversion (DBI) for data bus • Command/A.


EDY4016A MT40A2G4 MT40A1G8


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