EDB8132B4PB-8D-F

Embedded LPDDR2 SDRAM Features Embedded LPDDR2 SDRAM EDB8132B4PB-8D-F Features Ultra-low-voltage core and I/O power supplies Frequency range – 400 MHz (data rate: 800 Mb/s/pin) 4n prefetch DDR architecture 8 internal banks for concurrent operation Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) Programmable READ and WRITE latencies (RL/WL) Burst length: 4, 8, and 16 Per-bank refresh for concurrent operation Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor Partial-array self refresh (PASR) Deep power-down mode (DPD) Selectable output drive strength (DS) Clock-stop capability Lead-free (RoHS-compliant) and halogen-free packaging Options Density/Chip select – 8Gb/2-CS - dual die Organization – x32 VDD1/VDD2/VDDQ: 1.8V/1.2V/1.2V Revision FBGA “green” p...