Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
Low forward voltage drop,low switching losses
High surge capability
The plastic material carries U/L recognition 94V-0
MechaHnigich asulrgDeacatapability
High surge capability
Case:JEDEC TO--220AC,molded plastic
Polarity: As marked
Weight: 0.064 ounce, 1.81 grams
Mounting position: Any
SR1620-SR1680
Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 - 80 V
FORWARD CURRENT: 16 A
TO-220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
12
2.6± 0.2
0.9± 0.1
5.0± 0.1
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SR
1620
SR
1630
SR
1640
SR
1660
Maximum recurrent peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
h @TA=100
VRRM
VRMS
VDC
IF(AV)
20
14
20
30 40
21 28
30 40
60
42
60
16.0
Peak forw ard surge current 8.3 ms single half
b sine-w ave superimposed on rated load
v (JEDEC Method) @TJ =125
IFSM
200.0
Maximum instantaneous forw ard voltage per leg
@ 16A (Note1)
VF
0.55
0.7
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
Note: 1. Pulse test:300us pulse width,1% duty cy cle.
IR
TJ
TSTG
1.0
50.0
-55 --- +150
-55 --- +150
SR
1680
80
56
80
UNITS
V
V
V
A
A
0.85 V
mA
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