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EDB105S

GME

SILICON BRIDGE RECTIFIERS

Production specification SILICON BRIDGE RECTIFIERS EDB101S--EDB106S SFEATURES z Rating to 1000V PRVP z Surge overloa...


GME

EDB105S

File Download Download EDB105S Datasheet


Description
Production specification SILICON BRIDGE RECTIFIERS EDB101S--EDB106S SFEATURES z Rating to 1000V PRVP z Surge overload rating to 30 Amperes peak z Ideal for printed circuit board Pb Lead-free z Reliable low cost construction utilizing molded plastic technique results in inexpensive product z Lead solderable per MIL-STD-202 method 208 z Glass passivated chip junctions z Plastic material has UL flammability classification94V-O z Polarity symbols molded on body Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S Peak Repetitive Reverse Voltage RMS Reverse Voltage DC Blocking Voltage Maximum average forward Output current @TA=55℃ Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load VRRM VRMS VDC IF(AV) IFSM 50 35 50 100 150 200 300 400 70 105 140 210 280 100 150 200 300 400 1.0 30 Thermal Characteristics UNITS V V V A A Characteristic Typical junction calacitance (NO...




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