1N5061

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 1N5059 to 1N5062 Controlled avalanche rectifiers Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 19 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION 1N5059 to 1N5062 Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM 1N5059 1N5060 1N5061 1N5062 VRWM crest working reverse voltage 1N5059 1N5060 1N5061 1N5062 VR continuous reverse voltage 1N5059 1N5060 1N5061 1N5062 IF(AV) average forward current PARAMETER repetitive peak reverse voltage  This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. − − − − − − − − − − − − MAX. 200 400 600 800 200 400 600 800 200 400 600 800 2.0 V V V V V V V V V V V V A UNIT Ttp = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − − 0.8 A IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse ...