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K7A801801M

Samsung semiconductor
Part Number K7A801801M
Manufacturer Samsung semiconductor
Description 256Kx36 & 512Kx18 Synchronous SRAM
Published Nov 23, 2017
Detailed Description K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Bu...
Datasheet PDF File K7A801801M PDF File

K7A801801M
K7A801801M

Overview
K7A803601M K7A801801M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.
No.
History 0.
0 Initial draft 0.
1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max.
0.
2 Remove 119BGA Package Type.
0.
3 Change DC Characteristics.
ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 0.
4 1.
Changed tCD from 4.
0ns to 4.
2ns at -85.
Changed tOE from 4.
0ns to 4.
2ns at -85.
2.
Changed DC condition at Icc and parameters Icc ; from 375mA to 400mA at -72, from 340mA to 380mA at -...


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