AOI403

AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS ID (at VGS= -20V) RDS(ON) (at VGS= -20V) RDS(ON) (at VGS = -10V) 100% UIS Tested 100% Rg Tested -30V -70A < 6.2mΩ < 8mΩ (< 6.7mΩ∗) (< 8.5mΩ∗) Top View TO252 DPAK Bottom View D D Top View TO251A IPAK Bottom View S G G S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Ju...