BXY43C

Silicon PIN Diodes q q q BXY 43 High-speed switching Phase shifting up to 10 GHz Power splitter Type BXY 43A BXY 43B BXY 43C Marking – Ordering Code Q62702-X116 Q62702-X104 Q62702-X105 Pin Configuration Cathode: black dot, Package1) T1 Maximum Ratings Parameter Breakdown voltage Forward current Peak forward current, tp =1 µs Total power dissipation Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - case Rth JC 80 70 70 K/W Symbol BXY 43A V(BR) IF IFRM Ptot Tj Tstg Top 150 400 10 500 175 – 55 … + 150 – 55 … + 150 Values BXY 43B 150 500 20 600 BXY 43C 150 500 20 600 V mA A mW ˚C Unit 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BXY 43 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 100 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 50 V, f = 1 MHz BXY 43A BXY 43B BXY 43C Forward resistance IF = 10 mA, f = 100 MHz BXY 43A BXY 43B BXY 43C Charge carrier life time IF = 10 mA, IR = 6 mA BXY 43A BXY 43B BXY 43C Storage time IF = 10 mA, VR = 10 V BXY 43A BXY 43B BXY 43C Case series inductance Preaging at forward current for 168 hours BXY 43A BXY 43B BXY 43C Gross and fine leakage test – Ls IL – – – – 0.2 0.2 0.5 10–8 – – – – torr.1 –s ts – – – – 15 20 25 0.3 – – – – nH A τL Values typ. max. Unit IR VF – – 5 1 – – nA V CT – – – rf – – – 1.2 1.0 1.0 – – – 0.19 0.25 0.35...