BUZ76A
Semiconductor
Data Sheet
October 1998
File Number 2265.1
2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET
Features
2.6A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as SOA is Power Dissipation Limited A) switching regulators, switching con...
