BUZ76

BUZ76 Semiconductor Data Sheet October 1998 File Number 2264.1 3A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features 3A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 1.800Ω (BUZ76) field effect transistor designed for applications such as SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds (3A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 400V, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 1.800 High Input Impedance Ohm, N- Formerly developmental type TA17404. Majority Carrier Device Channel Related Literature Power Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND MOSComponents to PC Boards” BUZ76 TO-220AB BUZ76 FET) /Author NOTE: When ordering, use the entire part number. Symbol () D /Keywords G (Harris SemiS conductor, NChannel Power Packaging MOSJEDEC TO-220AB FET, SOURCE TODRAIN 220AB) GATE DRAIN (FLANGE) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ76 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ76 400 400 3 12 ±20 40 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A A V...