BUZ73A

BUZ73A Semiconductor Data Sheet October 1998 File Number 2263.1 5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET Features 5.8A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.600Ω (BUZ73 field effect transistor designed for applications such as SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (5.8A, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 200V, High Input Impedance 0.600 Formerly developmental type TA4600. Majority Carrier Device Ohm, N Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ73A TO-220AB BUZ73A MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSSOURCE FET, DRAIN GATE TODRAIN (FLANGE) 220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ73A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ76A 200 200 5.8 23 ±20 40 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A...