SIPMOS ® Power Transistor
BUZ 72A
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type...
SIPMOS ® Power
Transistor
BUZ 72A
N channel Enhancement mode Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
100 V
ID
9A
RDS(on)
0.25 Ω
Package
Ordering Code
BUZ 72 A
TO-220 AB
C67078-S1313-A3
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 ˚C
ID
A 9
Pulsed drain current
TC = 25 ˚C
IDpuls
36
IAR EAR EAS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 ˚C
10 7.9 mJ
59
VGS Ptot
Gate source voltage Power dissipation
TC = 25 ˚C
± 20
40
V W
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150
˚C
≤ 3.1
75 E 55 / 150 / 56
K/W
Data Sheet
1
05.99
BUZ 72A
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
V (BR)DSS
V 100 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
2.1
IDSS
3
4 µA
Zero gate voltage drain current
VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C
IGSS
0.1 10
1 100 nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
VGS = 10 V, ID = 6 A
Ω
0.2 0.25
Data Sheet
2
05.99...