Document
SIPMOS ® Power Transistor
BUZ 72
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
100 V
ID
10 A
RDS(on)
0.2 Ω
Package
Ordering Code
BUZ 72
TO-220 AB
C67078-S1313-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 ˚C
ID
A 10
Pulsed drain current
TC = 25 ˚C
IDpuls
40
IAR EAR EAS
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 ˚C
10 7.9 mJ
59
VGS Ptot
Gate source voltage Power dissipation
TC = 25 ˚C
± 20
40
V W
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150
˚C
≤ 3.1
75 E 55 / 150 / 56
K/W
Data Sheet
1
05.99
BUZ 72
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
V (BR)DSS
V 100 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
2.1
IDSS
3
4 µA
Zero gate voltage drain current
VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C
IGSS
0.1 10
1 100 nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-resistance
VGS = 10 V, ID = 6 A
Ω
0.15 0.2
Data Sheet
2
05.99
BUZ 72
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
VDS≥ 2 * ID * RDS(on)max, ID = 6 A
gfs
S 3 4.3 pF 400 530
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
120
180
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
70
105 ns
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
tr
10
15
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
td(off)
45
70
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
tf
55
75
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
-
40
55
Data Sheet
3
05.99
BUZ 72
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit
Inverse diode continuous forward current
TC = 25 ˚C
IS
A 10
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM
V SD
-
40 V
Inverse diode forward voltage
VGS = 0 V, IF = 20 A
trr
1.4
1.6 ns
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr
170
µC
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
-
0.3
-
Data Sheet
4
05.99
BUZ 72
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
11 A
45 W
Ptot
35 30 25 20 15
ID
9 8 7 6 5 4 3
10 5 0 0
2 1 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160
TC
TC
Safe operating area.