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BUZ72 Dataheets PDF



Part Number BUZ72
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description Power Transistor
Datasheet BUZ72 DatasheetBUZ72 Datasheet (PDF)

SIPMOS ® Power Transistor BUZ 72 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 10 A RDS(on) 0.2 Ω Package Ordering Code BUZ 72 TO-220 AB C67078-S1313-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 ˚C ID A 10 Pulsed drain current TC = 25 ˚C IDpuls 40 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RG.

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SIPMOS ® Power Transistor BUZ 72 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 10 A RDS(on) 0.2 Ω Package Ordering Code BUZ 72 TO-220 AB C67078-S1313-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 ˚C ID A 10 Pulsed drain current TC = 25 ˚C IDpuls 40 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 ˚C 10 7.9 mJ 59 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 40 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 72 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 6 A Ω 0.15 0.2 Data Sheet 2 05.99 BUZ 72 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 6 A gfs S 3 4.3 pF 400 530 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 120 180 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 70 105 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 10 15 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 45 70 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 55 75 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 40 55 Data Sheet 3 05.99 BUZ 72 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A 10 Inverse diode direct current,pulsed TC = 25 ˚C ISM V SD - 40 V Inverse diode forward voltage VGS = 0 V, IF = 20 A trr 1.4 1.6 ns Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 170 µC Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.3 - Data Sheet 4 05.99 BUZ 72 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 11 A 45 W Ptot 35 30 25 20 15 ID 9 8 7 6 5 4 3 10 5 0 0 2 1 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area.


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