BUZ61A

BUZ 61 A SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 11 A RDS(on) 0.5 Ω Package Ordering Code BUZ 61 A TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 11 Pulsed drain current TC = 25 °C IDpuls 44 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C 12.5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ≤ 0.83 75 E 55 / 150 / 56 K/W Semiconductor Group 1 07/96 BUZ 61 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 400 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 400 V, V GS = 0 V, Tj = 25 °C V DS = 400 V, V GS = 0 V, Tj = 125 °C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 8 A Ω...