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BUZ61

Infineon Technologies AG
Part Number BUZ61
Manufacturer Infineon Technologies AG
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 61 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type ...
Datasheet PDF File BUZ61 PDF File

BUZ61
BUZ61

Overview
BUZ 61 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 12.
5 A RDS(on) 0.
4 Ω Package Ordering Code BUZ 61 TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 12.
5 Pulsed drain current TC = 25 °C IDpuls 50 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.
5 A, VDD = 50 V, RGS = 25 Ω L = 6.
38 mH, Tj = 25 °C 12.
5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chi...


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