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BUZ61

Siemens Semiconductor Group
Part Number BUZ61
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 61 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ61 PDF File

BUZ61
BUZ61

Overview
BUZ 61 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 61 VDS 400 V ID 12.
5 A RDS(on) 0.
4 Ω Package TO-220 AB Ordering Code C67078-S1341-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12.
5 Unit A ID IDpuls 50 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12.
5 13 mJ ID = 12.
5 A, VDD = 50 V, RGS = 25 Ω L = 6.
38 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Therma...


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