BUZ42

BUZ42 Semiconductor Data Sheet October 1998 File Number 2417.1 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET Features 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 2.000Ω (BUZ42 field effect transistor designed for applications such as SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (4A, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, High Input Impedance 2.000 Formerly developmental type TA17415. Majority Carrier Device Ohm, N Related Literature Channel Ordering Information - TB334 “Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND Power Components to PC Boards” BUZ42 TO-220AB BUZ42 MOSNOTE: When ordering, use the entire part number. FET) Symbol /Author D () /KeyG words (Harris S Semiconductor, NChannel Packaging Power JEDEC TO-220AB MOSFET, SOURCE TODRAIN GATE 220AB) /Creator DRAIN (FLANGE) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ42 500 500 4.0 16 ±20 75 300 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W m...