BUZ385

BUZ 385 SIPMOS ® Power Transistor N channel Enhancement mode FREDFET Pin 1 G Pin 2 D Pin 3 S Type BUZ 385 VDS 500 V ID 9A RDS(on) 0.8 Ω Package TO-218 AA Ordering Code C67078-A3210-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 500 500 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 9 TC = 25 °C Pulsed drain current IDpuls 36 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 385 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3.5 20 100 10 0.6 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 250 1000 µA VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.8 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 6.5 A Semiconductor Group 2 07/96 BUZ 385 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transcond...