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BUZ339

Siemens Semiconductor Group
Part Number BUZ339
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 339 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ339 PDF File

BUZ339
BUZ339

Overview
BUZ 339 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 339 VDS 500 V ID 11.
5 A RDS(on) 0.
5 Ω Package TO-218 AA Ordering Code C67078-S3133-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 11.
5 Unit A ID IDpuls 46 TC = 33 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 11.
5 16 mJ ID = 11.
5 A, VDD = 50 V, RGS = 25 Ω L = 10.
8 mH, Tj = 25 °C Gate source voltage Power dissipation 790 VGS Ptot ± 20 170 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Ther...


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