BUZ32

SIPMOS ® Power Transistor BUZ 32 N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 32 200 V 9.5 A 0.4 Ω TO-220 AB C67078-S1310-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 9.5 A TC = 29 ˚C Pulsed drain current IDpuls 38 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 9.5 6.5 mJ ID = 9.5 A, VDD = 50 V, RGS = 25 Ω L = 2 mH, Tj = 25 ˚C Gate source voltage Power dissipation 120 VGS Ptot ± 20 75 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 1.67 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 32 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.3 0.4 Ω VGS = 10 V, ID = 6 A Data Sheet 2 05.99 BUZ...