BUZ 31
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
...
BUZ 31
SIPMOS ® Power
Transistor
N channel Enhancement mode Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 31
200 V
14.5 A
0.2 Ω
TO-220 AB
C67078-S.1304-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
ID
14.5
A
TC = 30 ˚C
Pulsed drain current
IDpuls
58
TC = 25 ˚C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
14.5 9 mJ
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω L = 1.42 mH, Tj = 25 ˚C
Gate source voltage Power dissipation 200
VGS Ptot
± 20
95
V W
TC = 25 ˚C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150
˚C
≤ 1.32
75 E 55 / 150 / 56
K/W
Data Sheet
1
05.99
BUZ 31
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Symbol min.
Values typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
200 -
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS(th)
2.1 3 4 µA 0.1 10 1 100 nA 10 100
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
0.16 0.2
Ω
VGS = 10 V, ID = 9 A
Data Sheet
2
05.9...
