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BUZ308

Siemens Semiconductor Group
Part Number BUZ308
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 308 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ308 PDF File

BUZ308
BUZ308

Overview
BUZ 308 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 308 VDS 800 V ID 2.
6 A RDS(on) 4Ω Package TO-218 AA Ordering Code C67078-S3109-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.
6 Unit A ID IDpuls 10 TC = 50 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 66.
6 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistanc...


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