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BUZ305

Siemens Semiconductor Group
Part Number BUZ305
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 305 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ305 PDF File

BUZ305
BUZ305

Overview
BUZ 305 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 305 VDS 800 V ID 7.
5 A RDS(on) 1Ω Package TO-218 AA Ordering Code C67078-S3134-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7.
5 Unit A ID IDpuls 30 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7.
5 16 mJ ID = 7.
5 A, VDD = 50 V, RGS = 25 Ω L = 27.
7 mH, Tj = 25 °C Gate source voltage Power dissipation 830 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal res...


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