BUZ255

BUZ 272 SIPMOS ® Power Transistor P channel Enhancement mode Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 272 VDS -100 V ID -15 A RDS(on) 0.3 Ω Package TO-220 AB Ordering Code C67078-S1454-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -15 Unit A ID IDpuls -60 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 290 mJ ID = -15 A, VDD = -25 V, RGS = 25 Ω L = 1.93 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 272 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -100 -3 -0.1 -10 -10 0.2 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -100 V, VGS = 0 V, Tj = 25 °C VDS = -100 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -100 nA Ω 0.3 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -9.5 A Semiconductor Group 2 07/96 BUZ 272 Electrical Characteristics, at Tj = 25°C, unless otherwise specif...