BUZ272

BUZ 271 SIPMOS ® Power Transistor P channel Enhancement mode Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 271 VDS -50 V ID -22 A RDS(on) 0.15 Ω Package TO-220 AB Ordering Code C67078-S1453-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -22 Unit A ID IDpuls -88 TC = 26 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 200 mJ ID = -22 A, VDD = -25 V, RGS = 25 Ω L = 413 µH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤1 ≤ 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 271 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -3 -0.1 -10 -10 0.12 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS -100 nA Ω 0.15 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -14 A Semiconductor Group 2 07/96 BUZ 271 Electrical Characteristics, at Tj = 25°C, unless otherwise specified...