BUZ21L

BUZ 21 L SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level Pin 1 G Type BUZ 21 L Pin 2 D Pin 3 S VDS 100 V ID 21 A RDS(on) 0.085 Ω Package TO-220 AB Ordering Code C67078-S1338-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 21 Unit A ID IDpuls 84 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 11.5 mJ ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 100 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 75 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 1.67 75 E 55 / 150 / 56 °C K/W Semiconductor Group 1 01/97 BUZ 21 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.6 0.1 10 10 0.075 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.085 VGS = 20 V, VDS = 0 V Drain-Source on-resistance...