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BUZ12AL

Siemens Semiconductor Group
Part Number BUZ12AL
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 12 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level ...
Datasheet PDF File BUZ12AL PDF File

BUZ12AL
BUZ12AL

Overview
BUZ 12 AL Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 G Type BUZ 12 AL Pin 2 D Pin 3 S VDS 50 V ID 42 A RDS(on) 0.
035 Ω Package TO-220 AB Ordering Code C67078-S1331-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 44 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 42 2.
5 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 23.
2 µH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 41 VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C Operati...


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